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  r07ds0683ej0100 rev.1.00 page 1 of 6 feb 25, 2013 preliminary datasheet bcr8lm-12la 600v - 8a - triac medium power use features ? i t (rms) : 8 a ? v drm : 600 v ? i fgti , i rgti , i rgt iii : 10 ma ? v iso : 1800v ? insulated type ? planar type ? ul recognized : file no. e223904 outline renesas package code: prss0003af-a) ( package name: to-220fl) 1 2 3 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal applications switching mode power supply, washing machine, motor control, heater control, and other general purpose ac power control applications maximum ratings voltage class parameter symbol 12 unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v parameter symbol ratings unit conditions rms on-state current i t (rms) 8 a commercial frequency, sine full wave 360? conduction, tc = 82 ?c surge on-state current i tsm 80 a 60 hz sine wave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 26 a 2 s value corresponding to 1 cycle of half wave 60 hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ?40 to +125 ?c storage temperature tstg ?40 to +125 ?c mass ? 1.5 g typical value isolation voltage note4 v iso 1800 v ta = 25 ?c, ac 1 minute, t1 ? t2 ? g terminal to case r07ds0683ej0100 rev.1.00 feb 25, 2013
bcr8lm-12la preliminary r07ds0683ej0100 rev.1.00 page 2 of 6 feb 25, 2013 electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 ?c, v drm applied on-state voltage v tm ? ? 1.6 v tc = 25 ?c, i tm = 12 a, instantaneous measurement holding current i h ? 10 ? ma tj = 25 ?c, v d = 12 v, r gt1 = ? ? v fgt ? ? ? 1.5 v ?? v rgt ? ? ? 1.5 v gate trigger voltage note2 ??? v rgt ??? ? ? 1.5 v tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? ? i fgt ? ? ? 10 ma ?? i rgt ? ? ? 10 ma gate trigger current note2 ??? i rgt ??? ? ? 10 ma tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2 ? ? v tj = 125 ?c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 4.3 ? c/w junction to case note3 notes: 1. gate open. 2. measurement using the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 ?c/w. 4. make sure that your finished product containing this device meets your safe isolation requirements. for safety, it is advisable that heatsink is electrically floating.
bcr8lm-12la preliminary r07ds0683ej0100 rev.1.00 page 3 of 6 feb 25, 2013 performance curves 10 2 10 3 10 4 10 ?1 10 0 10 1 10 2 0 1 3 4 5 2 10 2 10 3 10 1 ?400 40 8 0 120 160 typical example 10 2 10 3 10 1 i rgt iii ?400 40 8 0 120 160 typical example i rgt i , i fgt i 10 1 10 ?1 10 0 10 1 10 2 10 3 10 4 v gd = 0.2v v gt = 1.5v i fgt i i rgt i , i rgt iii i gm = 2a p gm = 5w p g(av) = 0.5w v gm = 10v 10 0 10 1 10 2 100 60 40 0 20 80 maximum on-state ch aracter istics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate ch aracter istics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junct ion temperature junct ion temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junct ion temperature junct ion temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junct ion to case) conduction time (cycles at 60hz) transient thermal i mpedance (c/w) 4 0123 10 2 10 1 10 0 tj = 25c tj = 150c
bcr8lm-12la preliminary r07ds0683ej0100 rev.1.00 page 4 of 6 feb 25, 2013 6 4 2 0 8 10 14 12 16 0246 16 10 8 12 14 360 conduction resistive, inductive loads no fins 10 3 10 2 10 1 10 1 10 2 10 3 10 4 10 5 10 0 10 ? maximum transient thermal impedance characteristics (junction to am bient) transient thermal impedance (c/w) conduction time (cycles at 60hz) on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case t emperature vs. rms on-state current rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (c) rms on-state current (a) ambient temperature (c) allo wable ambient temperature vs. rms on-state current junction t emperature (c) rep eti t ive peak o ff-state current ( tj = t c) rep eti t ive peak o ff-state current ( tj = 2 5c) 100 ( % ) repetitive peak off-state current vs. junction t emperature 0 20 40 80 60 100 120 140 160 00 .5 1.01 .5 3. 02.5 2.0 n atu ral conv ecti on n o fin s cur v e s a pply regardl e ss o f condu cti on angl e resist ive , indu ctive l oads 60 60 t2 .3 120 120 t2 .3 100 100 t2 .3 02468 10 12 1 6 14 0 20 40 80 60 100 120 140 160 02468 10 12 1 6 14 0 20 40 80 60 100 120 140 160 all fins are black painted aluminum and greased cur v e s a pply regardl e ss o f condu cti on angl e resist ive , i ndu ctive loads n atu ral conv ecti on curves apply regardless of conduction angle 360 conduction resistive, inductive loads ?400 40 8 0120 160 10 3 10 2 10 1 10 0 10 ? typical example
bcr8lm-12la preliminary r07ds0683ej0100 rev.1.00 page 5 of 6 feb 25, 2013 ?00 40 8 01201 60 holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) rate of rise of off-state voltage (v/) breakover voltage (dv/dt = xv/) breakover voltage (dv/dt = 1v/) 100 (%) b reakov er vo l tage vs. rate o f r ise o f o ff-state vo l tage ( tj = 125c) breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) typical example ?00 40 8 01201 60 0 20 40 80 60 100 120 140 160 typical example 0 20 40 80 60 100 120 140 160 typical example tj = 125c iii quadrant i quadrant 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 2 10 1 10 3 10 2 10 1 i rgt iii gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width () gate trigger current vs. gate current pulse width i fgt i i rgt i 330 330 330 a v a v gate trigger characteristics test circuits 6 a v test procedure i test procedure iii test procedure ii
bcr8lm-12la preliminary r07ds0683ej0100 rev.1.00 page 6 of 6 feb 25, 2013 package dimensions unit: mm previous code prss0003af-a to-220fl mass[typ.] 1.5g ? enesas code jeita package code package name to-220fl 3.6 0.3 15. 0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 .2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2 .6 0 . 2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part number packing quantity remark bcr8lm-12la#b00 tube 50 pcs. straight type bcr8lm-12la-a8#b00 tube 50 pcs. a8 lead form note: please confirm the specificati on about the shipping in detail.
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